微腔等离子体晶体管综述  

Review of Microcavity Plasma Transistors

作　　者：王耀功[1] 张小宁[1] 吴胜利[1] 刘纯亮[1] WANG Yao-gong;ZHANG Xiao-ning;WU Sheng-li;LIU Chun-liang(Key Laboratory of Physical Electronics and Devices of the Ministry of Education,Xi′an Jiaotong University,Xi′an 710049,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《真空电子技术》2018年第3期20-29,82,共11页Vacuum Electronics

摘　　要：微腔等离子体器件(MPD)具有高功率,耐高温高辐射,抗电磁干扰等特点,在推进、控制、高功率电磁波放大等方面有着重要的应用价值。本文介绍了近年MPD的发展及特点,尤其是微腔等离子体在晶体管器件研究中的发展概况。通过介绍等离子体双极型晶体管和等离子体场效应晶体管的器件结构、工作原理及工作特性,阐明了微腔等离子体器件在晶体管应用方面的研究意义。Because of the high power and the good resistance to high temperature,high radiation and electromagnetic interference,variety of concepts and applications based on microplasma devices（MPDs）are explored in terms of propulsion,control,high power electromagnetic wave amplification,optical engineering and so forth.In this paper,the development and characteristics of MPD devices in recent years are introduced,especially to the plasma transistors.By introducing the structure,working mechanism and characteristics of the plasma bipolar junction transistor and plasma field effect transistor,the scientific significance and application value of the plasma transistors are expounded.

关 键 词：微腔等离子体 等离子体装置 辉光放电 等离子体晶体管 等离子体开关 

分 类 号：TN13[电子电信—物理电子学]