n型Cu_2O薄膜的简易水热法制备及其光电化学性能  

Preparation by a Simplified Hydro-Thermal Method and Photoelectrochemical Properties of n-Type Cu_2O Film

作　　者：熊良斌[1] 李双明 李必慧 曾庆栋[1] 王波云 聂长江 XIONG Liang-Bin;LI Shuang-Ming;LI Bi-Hui;ZENG Qing-Dong;WANG Bo-Yun;NIE Chang-Jiang(School of Physics and Electronic-Information Engineering,Hubei Engineering University,Xiaogan,Hubei 432000,China;School o f Chemistry and Material Science,Hubei Engineering University,Xiaogan,Hubei 432000,China)

机构地区：[1]湖北工程学院电子与信息工程学院,孝感432100 [2]湖北工程学院化学与材料科学学院,孝感432100

出　　处：《无机化学学报》2018年第7期1271-1278,共8页Chinese Journal of Inorganic Chemistry

基　　金：湖北省自然科学基金(No.2016CFB511);湖北省教育厅指导性项目(No.B2015036);国家自然科学基金(No.61705064;11647122)资助

摘　　要：采用一种简单的水热法,通过控制反应时间,使用铜片在只含有Cl^-的非含铜前驱物的NaCl溶液中生长出了n型Cu_2O薄膜。对制备的样品进行了X射线衍射(XRD)、拉曼光谱(Raman)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和光电化学等表征或测试。本水热法相对其他的水热法工艺更简单,成本更低且能进行快速大规模化的生产。且得到的n型Cu_2O薄膜晶化程度高,经过Cl^-掺杂后,载流子浓度高达9.75×10^(17) cm^(-3),在可见光照射下表现出较好的光电转换性能。光电化学和电化学阻抗谱表明在中等浓度(0.1 mol·L^(-1))NaCl溶液中90℃的条件下水热反应50 h制备的Cu_2O薄膜具有最好的光电性能。n-Type Cu2O films were prepared by a simplified hydro-thermal method, using only Cu plate and NaCl solution as precursors. Subsequently, the prepared samples were characterized by X-ray diffraction（XRD）, laser raman spectrometer（Raman）, scanning electron microscope（SEM）, X-ray photoelectron spectroscopy（XPS） and photoelectrochemical methods. The technology for the preparation of n-type Cu2O films is simpler and lower cost than others and available for the industrialization. The prepared n-type Cu2O films are highly crystallized and have high carrier concentrations（up to 9.75 ×10^（17） cm^（-3）） with Cl^- doping. The photoelectrochemical and EIS measurements demonstrate that the sample prepared in 0.1 mol·L^（-1） NaCl solution with 50 h reaction time at 90℃ obtains the best photoelectrochemical properties.

关 键 词：简易水热法 n型Cu2O薄膜 光电化学性能 Cl-掺杂 截流子浓度 

分 类 号：O614[理学—无机化学]