激光引信窄脉冲光源驱动电路设计  

Design of narrow pulse light source driving circuit of laser fuze

作　　者：陈杉杉[1] 张合[1] 徐孝彬 Chen Shanshan;Zhang He;Xu Xiaobin(ZNDY of Ministerial Key Laboratory,Nanjing University of Science and Technology,Nanjing 210094,China;College of Mechanical and Electrical Engineering,Hohai University,Changzhou 213022,China)

机构地区：[1]南京理工大学智能弹药技术国防重点学科实验室,江苏南京210094 [2]河海大学机电工程学院,江苏常州213022

出　　处：《红外与激光工程》2018年第A01期16-22,共7页Infrared and Laser Engineering

基　　金：武器装备预先研究项目（30107030802）

摘　　要：针对激光引信小型化和高性能的工作需求，设计了一种新型半导体激光器（LD）驱动电路。电路采用高速MOSFET作为开关器件，为激光器提供脉宽窄、上升时间短、峰值电流大的驱动脉冲。建立了相应的驱动电路模型，设计制作了尺寸为19mm×10mm的驱动电路，仿真和实验分析了供电电源、充电电容和阻尼电阻对驱动脉冲的影响。并根据仿真和实验结果选取最佳的电路参数，在此条件下驱动脉冲的脉宽为8．6ns、前沿上升时间为4ns、峰值电流为39A。该电路为激光引信探测性能的提高提供参考。Aiming at the miniaturization and high performance requirements of laser fuze, a novel driving circuit was designed to drive the pulse laser diode. The circuit used high-speed MOSFET as the switching element to generate a driving pulse with narrow pulse width, short rise time and large peak current for laser diode. A corresponding driving circuit model was established. The effects of supply voltage, energy storage capacitor and damping resistor on the performance of driving pulse were analyzed by simulation and experiment. A driving circuit with the size of 19 mm×10 mm was designed and the optimal circuit parameters were selected. The driving circuit provides a driving pulse with pulse width of 8.6 ns, rise time of 4 ns and peak current of 39 A. The design provides an effective improvement of detection performance of laser fuze.

关 键 词：激光引信 半导体激光器 脉冲激光 驱动电路 窄脉冲 

分 类 号：TJ43[兵器科学与技术—火炮、自动武器与弹药工程]