新型热电SnSe半导体晶体研究进展  

Recent Progress of Novel Thermoelectric SnSe Semiconductor Crystal

作　　者：金敏[1] 李雨萌 申慧 田甜 徐家跃 JIN Min;LI Yumeng;SHEN Hui;TIAN Tian;XU Jiayue(Ningbo Institute of Industrial Technology,Chinese Academy of Sciences,Ningbo 315201,Zhejiang,China;Institute of Crystal Growth,School of Materials Science and Engineering,Shanghai Institute of Technology,Shanghai 201418,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所,浙江宁波315201 [2]上海应用技术大学材料科学与工程学院晶体生长研究所,上海201418

出　　处：《应用技术学报》2018年第2期100-105,共6页Journal of Technology

基　　金：国家自然科学基金(51572175);浙江省自然科学基金(LY17A040012);浙江省公益研发项目(2017C31006);宁波市自然科学基金(2017A610009);上海市自然科学基金(15ZR1440600)资助

摘　　要：SnSe晶体是一种新型Ⅳ-Ⅵ族化合物半导体热电材料,具有极低的本征热导率和超高的热电优值ZT,因兼具有高性能、环境友好以及成本低廉等综合优势,近些年正成为国际上争相研究的热点。然而SnSe晶体属于层状结构材料且热膨胀性复杂,导致晶体在生长过程中极易出现解理和开裂,难以获得大尺寸晶体。本文对当前国内外几种主流SnSe晶体生长方法进行了归纳,包括水平气相法、垂直布里奇曼法、垂直温度梯度法等,综合评价了各种方法的优缺点。重点介绍了本团队在水平布里奇曼法生长SnSe晶体方面的研究结果,该方法有望成为未来制备高质量、大尺寸SnSe晶体的一种主流技术。此外,还将不同SnSe晶体的热电优值ZT进行了比较,并对其性能波动进行了初步分析。本综述论文将有助于加深人们对SnSe晶体生长特性的认识,并为未来该晶体材料制备和性能研究提供参考。SnSe crystal is novel Ⅳ-Ⅵ group compound semiconductor thermoelectric material,it has very low intrinsic thermal conductivity and ultra-high figure of merit ZT value.Due to its high performance,environmental friendly and low cost advantages,the research of SnSe crystal has become a hot point around the world.However,the growth of large size SnSe crystal is hard mainly because of its layer crystal structure and complicated thermal expansion behavior.In this paper,some growth methods for SnSe crystal growth are introduced and compared,such as horizontal vapour method,vertical Bridgman method and vertical gradient frozen method.Additionally,the growth result of SnSe by a horizontal Bridgman method in our group is also reported which is concluded would be a key technology for high quality and large size SnSe crystal growth in the future.Moreover,the figure of merit ZTof different SnSe crystals is also compared,and its value variation is analyzed.This review paper would be helpful for deep understanding the growth character of SnSe crystal,and it will provide suggestions for SnSe crystal fabrication and property investigation in future.

关 键 词：SnSe晶体 热电材料 晶体生长 水平布里奇曼法 

分 类 号：O782[理学—晶体学]