Quantum confinement effect in β-SiC nanowires  

作　　者：Gang Peng Xiaoyan Yu Yan-Lan He Gong-Yi Li Yi-Xing Liu Xinfang Zhang Xue-Ao Zhang 彭刚;于晓燕;何焰兰;李公义;刘一星;张鑫方;张学骜(college of Science,National University of Defense Technology,Changsha 410073,China;School of Electronic Communication Engineering,Guiyang University,Guiyang 550005,China)

机构地区：[1]college of Science, National University of Defense Technology, Changsha 410073, China [2]School of Electronic Communication Engineering, Guiyang University, Guiyang 550005, China

出　　处：《Frontiers of physics》2018年第4期117-122,共6页物理学前沿（英文版）

基　　金：This work was supported by the NationalNatural Science Foundation of China （Grant No. 61675234） and the Advanced Research Foundation of the National University of Defense Technology （Grant No. zk16-03-40）.

摘　　要：The quantum confinement effect is important in nanoelectronics and optoelectronics applications; however, there is a discrepancy between the theory of quantum confinement, which indicates that band-gap widening occurs only at small sizes, and experimental observations of band-gap widening in large-diameter nanowires （NWs）. This paper reports an obvious blue shift of the absorption edge in the UV-visible absorption spectra of SiC NWs with diameters of 50-300 nm. On the basis of quantum confinement theory and high-resolution transmission electron microscopy images of SiC NWs, band-gap widening in SiC NWs with diameters of up to hundreds of nanometers is fully explained; the results could help to explain similar band-gap widening in other NWs with large diameters.The quantum confinement effect is important in nanoelectronics and optoelectronics applications; however, there is a discrepancy between the theory of quantum confinement, which indicates that band-gap widening occurs only at small sizes, and experimental observations of band-gap widening in large-diameter nanowires （NWs）. This paper reports an obvious blue shift of the absorption edge in the UV-visible absorption spectra of SiC NWs with diameters of 50-300 nm. On the basis of quantum confinement theory and high-resolution transmission electron microscopy images of SiC NWs, band-gap widening in SiC NWs with diameters of up to hundreds of nanometers is fully explained; the results could help to explain similar band-gap widening in other NWs with large diameters.

关 键 词：quantum confinement effect SiC nanowires （SiC NWs） band gap 

分 类 号：TS103.2[轻工技术与工程—纺织工程] TN16[轻工技术与工程—纺织科学与工程]