Collaborative R＆D between multicrystalline silicon ingots and battery efficiency improvement--effect of shadow area in multicrystalline silicon ingots on cell efficiency  

作　　者：Xiang Zhang Chunlai Huang Lei Wang Min Zhou 

机构地区：[1]China University of Mining and Technology, Xuzhou 221116, China [2]Jiangsu Key Lab of Silicon Based Electronic Materials, Jiangsu GCL Silicon Material Technology Development Co., Ltd.,Xuzhou 221001, China [3]State Key Lab of Silicon Materials and Department of Materials Science &Engineering, Zhejiang University, Hangzhou310058, China

出　　处：《Journal of Semiconductors》2018年第8期32-35,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.51532007);the Fundamental Research Funds for the Central Universities

摘　　要：We characterized strip-like shadows in cast multicrystalline silicon(mc-Si) ingots. Blocks and wafers were analyzed using scanning infrared microscopy, photoluminescence spectroscopy, laser scanning confocal microscopy, field-emission scanning electron microscopy, X-ray energy-dispersive spectrometry, and microwave photoconductivity decay technique. The effect on solar cell performance is discussed. The results show that the non-microcrystalline shadow region in Si ingots consists of precipitates of Fe, O, and C. The size of these Fe–O–C precipitates found at the shadow region is25 μm. Fe–O–C impurities can slightly reduce the minority carrier lifetime of the wafers while severely decrease in shunt resistance, leading to the increase in reverse current of the solar cells and degradation in cell efficiency.We characterized strip-like shadows in cast multicrystalline silicon(mc-Si) ingots. Blocks and wafers were analyzed using scanning infrared microscopy, photoluminescence spectroscopy, laser scanning confocal microscopy, field-emission scanning electron microscopy, X-ray energy-dispersive spectrometry, and microwave photoconductivity decay technique. The effect on solar cell performance is discussed. The results show that the non-microcrystalline shadow region in Si ingots consists of precipitates of Fe, O, and C. The size of these Fe–O–C precipitates found at the shadow region is ~25 μm. Fe–O–C impurities can slightly reduce the minority carrier lifetime of the wafers while severely decrease in shunt resistance, leading to the increase in reverse current of the solar cells and degradation in cell efficiency.

关 键 词：silicon SHADOW iron–oxygen–carbon precipitates minority carrier lifetime cell efficiency 

分 类 号：TN304.12[电子电信—物理电子学] TN304.23