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作 者:Yuede Yang Shaoshuai Sui Mingying Tang Jinlong Xiao Yun Du Andrew W.Poon Yongzhen Huang
机构地区:[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences [2]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences [3]Photonic Device Laboratory, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology
出 处:《Journal of Semiconductors》2018年第8期41-46,共6页半导体学报(英文版)
基 金:supported by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(No.QYZDJ-SSW-JSC002);the NSFC/RGC Joint Project(No.61431166003);the National Natural Science Foundation of China(No.61377105)
摘 要:We have proposed and demonstrated hybrid Al Ga In As/Si Fabry–Pérot(FP) lasers, with the FP cavity facet covered by the p-electrode metal for enhancing mode confinement. Continuous-wave lasing is obtained at room temperature with a threshold current of 45 m A for the hybrid FP laser with a cavity length of 415 μm and a width of 7 μm. Near-field optical microscope images indicate an efficient output emission from the underneath evanescently-coupled silicon waveguide. Furthermore, single-mode lasing with a side-mode suppression-ratio of29 d B and a threshold current of 16 m A is realized for the 150 μm-long hybrid FP laser.We have proposed and demonstrated hybrid Al Ga In As/Si Fabry–Pérot(FP) lasers, with the FP cavity facet covered by the p-electrode metal for enhancing mode confinement. Continuous-wave lasing is obtained at room temperature with a threshold current of 45 m A for the hybrid FP laser with a cavity length of 415 μm and a width of 7 μm. Near-field optical microscope images indicate an efficient output emission from the underneath evanescently-coupled silicon waveguide. Furthermore, single-mode lasing with a side-mode suppression-ratio of29 d B and a threshold current of 16 m A is realized for the 150 μm-long hybrid FP laser.
关 键 词:hybrid AlGaInAs/Si laser Fabry–Pérot cavity mode Q factor metal confinement
分 类 号:TN248[电子电信—物理电子学] TN248.4
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