Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip  

作　　者：Pengyi Yue Xiuming Dou Xiangbin Su Zhichuan Niu Baoquan Sun 

机构地区：[1]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Journal of Semiconductors》2018年第8期53-56,共4页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(No.2016YFA0301202);the National Natural Science Foundation of China(Nos.11474275,61674135,91536101)

摘　　要：We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers, heterogeneously integrated on silica/silicon chips. The microdisks are fabricated by photolithography and inductively coupled plasma etching. The lasing wavelength is approximately 1200 nm and the obtained lowest laser threshold is approximately 28 μW. The experimental results show an approach of possible integrated Ⅲ–Ⅴ optical active materials on silica/silicon chip for low threshold WGM microdisk lasers.We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers, heterogeneously integrated on silica/silicon chips. The microdisks are fabricated by photolithography and inductively coupled plasma etching. The lasing wavelength is approximately 1200 nm and the obtained lowest laser threshold is approximately 28 μW. The experimental results show an approach of possible integrated Ⅲ–Ⅴ optical active materials on silica/silicon chip for low threshold WGM microdisk lasers.

关 键 词：quantum dot whispering gallery mode laser 

分 类 号：TN248[电子电信—物理电子学] TN304.23