Gamma irradiation-induced effects on the properties of TiO_2 on fluorine-doped tin oxide prepared by atomic layer deposition  

作　　者：Syed Mansoor Ali M.S.Algarawi Turki S.ALKhuraiji S.S.Alghamdi Muhammad Hammad Aziz M.Isa 

机构地区：[1]Department of Physics and Astronomy,College of Science,King Saud University [2]National Center for Irradiation Technology,King Abdulaziz City for Science and Technology [3]Department of Physics,COMSATS Institute of Information and Technology [4]Department of Physics,Faculty of Science,University of Gujrat,Hafiz Hayat Campus

出　　处：《Nuclear Science and Techniques》2018年第7期191-197,共7页核技术（英文）

基　　金：supported by King Saud University,Deanship of Scientific Research,and College of Science Research Center

摘　　要：The effect of gamma irradiation with different doses(25–75 kGy) on TiO_2 thin films deposited by atomic layer deposition has been studied and characterized by X-ray diffraction(XRD),photoluminescence measurements,ultraviolet–visible(UV–Vis) spectroscopy,and impedance measurements.The XRD results for the TiO_2 films indicate an enhancement of crystallization after irradiation,which can be clearly observed from the increase in the peak intensities upon increasing the gamma irradiation doses.The UV–Vis spectra demonstrate a decrease in transmittance,and the band gap of the TiO_2 thin films decreases with an increase in the gamma irradiation doses.The Nyquist plots reveal that the overall charge-transfer resistance increases upon increasing the gamma irradiation doses.The equivalent circuit,series resistance,contact resistance,and interface capacitance are measured by simulation using Z-view software.The present work demonstrates that gamma irradiation-induced defects play a major role in the modification of thestructural,electrical,and optical properties of the TiO_2 thin films.The effect of gamma irradiation with different doses （25-75 kGy） on TiO2 thin films deposited by atomic layer deposition has been studied and characterized by X-ray diffraction （XRD）, photoluminescence measurements, ultraviolet-visible （UV-Vis） spectroscopy, and impedance measurements. The XRD results for the TiO2 films indicate an enhancement of crystallization after irradiation, which can be clearly observed from the increase in the peak intensities upon increasing the gamma irradiation doses. The UV-Vis spectra demonstrate a decrease in transmittance, and the band gap of the TiO2 thin films decreases with an increase in the gamma irradiation doses. The Nyquist plots reveal that the overall charge-transfer resistance increases upon increasing the gamma irradiation doses. The equivalent circuit, series resistance, contact resistance, and interface capacitance are measured by simulation using Z-view software. The present work demonstrates that gamma irradiation-induced defects play a major role in the modification of the structural, electrical, and optical properties of the TiO2 thin films.

关 键 词：TiO2 原子层 GAMMA 性质 氧化物 GAMMA NYQUIST 光致发光 

分 类 号：O434.19[机械工程—光学工程]