真空退火的CdTe/Au掺杂HgCdTe界面状态的影响  

Annealing of Au doped HgCdTe covered by electron beam evaporated CdTe

作　　者：王溪 周松敏[2] 孙常鸿[2] 魏彦峰[2] 沈灏[2] 林春[2] WANG Xi1,2, ZHOU Song-Min2 , SUN Chang-Hong2 , WEI Yan-Feng2, SHEN Hao2 , LIN Chun2.(1. University of Chinese Academy of Sciences, Beijing 100049, China; 2. Key laboratory of hffrared Imaging Material and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, Chin)

机构地区：[1]中国科学院大学,北京100039 [2]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2018年第4期399-402,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61705247)~~

摘　　要：对使用CdTe覆盖的HgCdTe材料在不同温度下进行了一系列的退火实验.研究发现,退火可以改善电子束蒸发CdTe的晶体状态,使CdTe和HgCdTe之间的界面状态得到改善.Au掺杂HgCdTe覆盖CdTe后,真空条件下退火,240℃和300℃对Au掺杂的浓度分布改变不大,Au掺杂的浓度几乎不变.但是,温度的不同会对汞空位的浓度产生显著的影响,因此退火温度不同会使载流子浓度明显不同.退火温度从240℃升高至300℃后,霍尔测试得到的载流子浓度从2×10^(16)cm^(-3)左右升高至5.5×1016cm^(-3)左右.In this report,series of annealing experiments under different temperatures of Au-doped Hg Cd Te covered by Cd Te have been implemented. The annealing process can improve the crystal state of electron beam evaporated Cd Te layer. The interface betw een Cd Te and Hg Cd Te can also be modified. The Au doping distribution in Hg Cd Te did not change after the vacuum annealing at 240℃ and300℃. How ever,the Au element diffused into the Cd Te cap layer significantly,leading to a higher concentration of（ 5 ~ 6） × 1016 cm^（-3）. On the other hand,the concentration of mercury vacancy after various annealing processes w as different due to the temperature-dependent diffusion mechanism. In general,the carrier concentration measured by HALL effect varied from 2 × 10^（16） cm-3 to 5. 5 × 10^（16） cm^（-3）,when the annealing temperature was increased from 240℃ to 300℃.

关 键 词：Au掺杂HgCdTe 电子束蒸发CdTe 退火 载流子浓度 Au分布 

分 类 号：TN215[电子电信—物理电子学]