退火对铝诱导结晶锗薄膜的影响及其机理  

Impact of Annealing on Germanium Thin Film Prepared by Aluminum-induced Crystallization and the Corresponding Mechanism

作　　者：贺凯[1] 陈诺夫[1] 魏立帅[1] 王从杰[1] 陈吉堃[2] HE Kai;CHEN Nuofu;WEI Lishuai;WANG Congjie;CHEN Jikun(School of Renewable Energy,North China Electric Power University,Beijing 102206;School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083)

机构地区：[1]华北电力大学可再生能源学院,北京102206 [2]北京科技大学材料科学与工程学院,北京100083

出　　处：《材料导报》2018年第15期2571-2575,共5页Materials Reports

基　　金：中央高校基本科研业务费专项资金(2016MS50);北京市自然科学基金(2151004)

摘　　要：为实现在Si衬底上制备GaInP/GaInAs/Ge三结太阳电池,本工作尝试利用磁控溅射和常规退火技术,采用铝诱导结晶(AIC)法在(100)晶面单晶硅衬底上制备Ge薄膜,利用金相显微镜(Metallographic microscopy)、X射线衍射仪(XRD)、拉曼光谱仪(Raman)对其进行表征。分析了铝诱导过程中退火时间和退火温度对Ge薄膜结晶性的影响,发现退火温度越低、时间越长,制备的薄膜质量越好,确定了Ge薄膜晶化的最低退火温度为250℃,并在该温度下成功制备出了晶粒尺寸超过100nm、Ge(111)晶面择优取向度达到99%以上的Ge薄膜。For the sake of fabricating GaInP/GaInAs/Ge triple-junction solar cell on silicon substrate,the present work made an attempt to prepare Ge film on a（100）monocrystalline silicon substrate following the strategy of aluminum-induced crystallization（AIC）by magnetron sputtering and conventional annealing method.The resultant samples were analyzed by metallographic microscopy,XRD and Raman spectroscopy,so as to investigate the effects of annealing time and annealing temperature during the process of AIC on Ge crystallinity.Our experiment confirmed the improved Ge film quality by adopting lower annealing temperatures and longer annealing durations.The minimum annealing temperature for the aluminum-induced Ge film crystallization was determined to be 250 ℃,under which a Ge film with a grain size larger than 100 nm and preferred orientation of Ge（111）facet higher than 99%was successfully obtained.

关 键 词：磁控溅射 常规热退火 铝诱导结晶 锗薄膜 多结太阳电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动]