应变Si纳米NMOSFET单粒子效应  

Single Event Effect in Strained Si Nano-Scale NMOSFET

作　　者：廖晨光 郝敏如 LIAO Chenguang;HAO Minru(School of Microelectronics,Xidian University,Xi＇an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071

出　　处：《电子科技》2018年第8期38-41,共4页Electronic Science and Technology

基　　金：陕西省科技计划项目(2016GY-085)

摘　　要：针对辐照条件下应变集成器件及电路的应用越来越多的问题,文中为了分析研究辐照特性对应变集成器件的影响,主要通过计算机模拟仿真(TCAD)的方法验证了漏斗模型的正确性,分别对单轴应变Si纳米NMOSFET器件在不同漏极偏置电压,不同沟道长度以及不同注入位置的单粒子效应进行了分析。通过TCAD模拟仿真了单粒子瞬态电流随着注入位置的电场变化。结果表明:单粒子瞬态电流随着漏极偏置电压的增大而增大,随着沟道长度的减小而增大;不同注入位置下的单粒子效应,此处的漏极瞬态电流大小与对应位置的电场强度成正比关系。该仿真结果为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了参考。Because of the increasing use of strained integrated devices and circuits under irradiation,the influence of radiation characteristics on the integrated devices is analyzed and studied. The single event effect in the uniaxial strained Si Nano-scale NMOSFET at different values of drain bias,gate length and striking location are thoroughly analyzed by two-dimensional numerical simulator in this paper. Finally,the electric field changes of the single event transient current with the injection position are simulated by TCAD. The results show that single event transient（ SET） current increase with the increase of drain bias but with the decrease of gate length,and the magnitude of the drain transient current is directly proportional to the electric field intensity at the corresponding location. Thus,the simulation results provide reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si Nano-scale NMOSFET.

关 键 词：单粒子瞬态 漏极偏置 栅长 注入位置 

分 类 号：TN406[电子电信—微电子学与固体电子学]