UHF波段GaN星载固放的设计  

The Design of UHF-Band SSPA Based on GaN

作　　者：谷德露 GU Delu(The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《电子科技》2018年第7期72-74,88,共4页Electronic Science and Technology

摘　　要：文中基于第三代半导体氮化镓器件抗辐照性能强的特点,设计了UHF波段星载固态功率放大器。对氮化镓器件进行了仿真设计,通过设计消除了器件的强不稳定性,将高频应用的氮化镓器件设计匹配至所需UHF波段,实现了在UHF波段的功率输出。测试结果显示,在UHF波段(f_0±10 MHz)固态功率放大器的输出功率达到48 W(46.81d Bm),功率增益68 d B,功率效率50%。Based on the characteristics of radiation-hardened in the third generation semiconductor GaN device HEMTs,a UHF-band SSPA used for space was designed. The simulation design of GaN device was carried out,the strong instability of the device was eliminated by design. The high frequency application of GaN device was designed to match the required UHF band,the power output in UHF band was realized. The results displaied,the Output power of SSPA in UHF band（ f0± 10 MHz） could achieve 48 W（ 46. 81 dBm）,the Power gain was 68 dB,the Power efficiency was 50%.

关 键 词：GAN器件 UHF波段 固态功率放大器 稳定性 

分 类 号：TN722[电子电信—电路与系统]