质子对碲锌镉辐照损伤的SRIM模拟  

SRIM Simulation of Radiation Damage by Proton in Zinc Telluride Cadmium

作　　者：朱岳 赵广义[1] 汪宏年[1] ZHU Yue;ZHAO Guangyi;WANG Hongnian(College of Physics,Jilin University,Changchun 130012,China)

机构地区：[1]吉林大学物理学院,长春130012

出　　处：《吉林大学学报（理学版）》2018年第4期973-978,共6页Journal of Jilin University:Science Edition

基　　金：中国科学院战略性先导科技专项基金(批准号:XDA14020102)

摘　　要：模拟计算质子对CdZnTe的辐照损伤.先计算质子在CdZnTe中的电离损伤和位移损伤,再计算不同能量和入射角的质子辐照CdZnTe产生的空位数,最后计算不同能量和入射角的质子辐照不同厚度CdZnTe靶的溅射产额.结果表明:电离损伤远大于位移损伤;CdZnTe内因质子辐照产生的空位数随质子能量的增大而增加,当质子入射角大于60°时,产生的空位数明显减少;CdZnTe低于半导体硅和金刚石的抗辐照性能;溅射产额与空位数相差较大,溅射产额随质子能量的增大先增大后减小,随质子入射角的增大而增大,随CdZnTe靶厚度的增大整体趋于增大.We simulated and calculated the radiation damage by proton in CdZnTe.Firstly,the ionization damage and displacement damage for protons in CdZnTe were calculated.Secondly,the number of vacancies generated by protons radiation at different energy and incident angles in CdZnTe were calculated.Finally,sputtering yields generated by protons radiation at different energy and incident angles in CdZnTe target with different thicknesses were calculated.The results show that ionization damage is much greater than displacement damage;the number of vacancies generated by proton radiation in CdZnTe increases with the increase of proton energy,and the number of vacancies decreases quickly when the incident angles of protons are greater than 60°.CdZnTe is lower than radiation resistance of silicon and diamond semiconductor materials.The sputtering yield is much lower than the number of vacancies in CdZnTe,sputtering yield increases first and then decreases with the increase of proton energy,and increases with the increase of incident angles of protons.The overall trend of sputtering yield increases with the increase of thickness of CdZnTe target.

关 键 词：MONTE CARLO模拟 质子 溅射产额 辐照损伤 

分 类 号：O571[理学—粒子物理与原子核物理]