The role of strain and polar discontinuity in magnetism in LaMnO_3/SrTiO_3/LaAlO_3(001) heterostructures  

The role of strain and polar discontinuity in magnetism in LaMnO_3/SrTiO_3/LaAlO_3(001) heterostructures

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作  者:Liang Wu Changjian Li Jing Ma Cewen Nan X.Renshaw Wang 

机构地区:[1]School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University [2]Department of Materials Science and Engineering, National University of Singapore [3]School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University

出  处:《Science Bulletin》2018年第15期949-951,共3页科学通报(英文版)

基  金:supported by the National Natural Science Foundation of China(51332001);the National Basic Research Program of China(2016YFA0300103);the Basic Science Center Project of the National Natural Science Foundation of China(51788104);Initiative Research Projects of Tsinghua University(20141081116);the support from Lee Kuan Yew Postdoctoral Fellowship through Ministry of Education of China Tier1(R-284-000-158-114);supports from the Nanyang Assistant Professorship Grant from Nanyang Technological University;Academic Research Fund Tier 1(RG108/17S)from Singapore Ministry of Education

摘  要:Creating novel interfacial effects in quantum-matter-based heterostructures is at the heart of condensed matter physics and materials science[1].Utilizing the subtle interplay among charge,spin,orbit and lattice degrees of freedom,these interfacial effects can spawn tailored functionalities and act as additional building blocks for the future oxide electronics.Among the various interfacial effects,the inevitable strain effect induced by unequal lattice constants and the ubiquitous charge redistribution effect at inter-Creating novel interfacial effects in quantum-matter-based heterostructures is at the heart of condensed matter physics and materials science [1]. Utilizing the subtle interplay among charge, spin, orbit and lattice degrees of freedom, these interracial effects can spawn tailored functionalities and act as additional building blocks for the future oxide electronics.

关 键 词:磁力 材料科学 电子学 氧化物 物理 格子 

分 类 号:TB303[一般工业技术—材料科学与工程]

 

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