纳米SiO2/硅橡胶复合材料的陷阱特性  

Trap Characteristics of Nano SiO2/Silicone Rubber Composite

作　　者：周福文 王梦丹[1] 屠幼萍[1] 艾昕 王璁[1] 袁之康 ZHOU Fuwen;WANG Mengdan;TU Youping;AI Xin;WANG Cong;YUAN Zhikang(Beijing Key Laboratory of High Voltage and Electromagnetic Compatibility,North China Electric Power University,Beijing 102206,China)

机构地区：[1]华北电力大学高电压与电磁兼容北京市重点实验室

出　　处：《高电压技术》2018年第8期2687-2694,共8页High Voltage Engineering

基　　金：国家重点基础研究发展计划(973计划)(2014CB239504);国家自然科学基金(51477072)~~

摘　　要：硅橡胶作为直流电缆附件中的主绝缘材料,存在空间电荷积聚的问题,研究硅橡胶纳米复合材料的陷阱特性对抑制聚合物材料的空间电荷积聚有重要意义。为此,以甲基乙烯基硅橡胶为基胶,制备了掺杂不同质量分数（5%、10%和20%）纳米SiO2粒子的硅橡胶纳米复合试样,通过扫描电子显微镜观测了试样的断面形貌,采用电容探头测量了试样在正、负电晕充电条件下的电位衰减特性,并结合双陷阱能级模型和等温表面电位衰减模型,获得了各试样的空穴陷阱特性和电子陷阱特性。研究结果表明：无纳米掺杂的纯硅橡胶试样中空穴陷阱多为浅陷阱,电子陷阱多为深陷阱;与纯硅橡胶相比,掺杂纳米SiO2粒子的质量分数为5%时,复合材料中空穴深陷阱密度增多,并且空穴陷阱和电子陷阱均以深陷阱为主;而当复合材料中纳米SiO2粒子质量分数增大至10%和20%时,其空穴和电子深陷阱密度显著下降,材料内部大量的浅陷阱有助于其电荷的消散。研究成果可为直流电缆附件中硅橡胶材料的改性提供一定的参考。As a main insulating material in the DC cable attachment, silicon rubber has the problem of space charge accumulation. It is important to study the trap characteristics of silicone rubber nanocomposites for the suppression of space charge accumulation in polymer materials. Consequently, suing methyl vinyl silicone rubber as base rubber, we prepared silicone rubber samples, which doped with different content（5%, 10% and 20%） of SiO2. The fracture surface of samples was observed by scanning electron microscope. Under the charge and discharge conditions of positive and negative corona, the potential decay characteristics of the sample were measured by an electrostatic probe. In order to obtain the hole-type trap characteristics and electron-type trap characteristics of samples, we adopted the double-trap energy model and the isothermal surface potential decay model. The results show that the hole-type traps in pure silicone rubber are mostly shallow traps, while most electron-type traps are deep traps. When the content of doped SiO2 nanoparticles is 5%, the hole-type trap depth and trap density of the composite are more than those of pure silicone rubber. At the same time, the hole-type traps and electron-type traps are dominated by deep traps. When the content of SiO2 nanoparticles in composite increases to 10% and 20%, the hole-type and electron-type deep traps density decreases significantly, and the surface potential is rapidly attenuated by a large number of shallow traps in the material. The results can provide some reference values for the modification of silicone rubber materials in DC cable accessories.

关 键 词：硅橡胶复合材料 纳米SiO2粒子 电容探头 等温表面电位衰减 空穴陷阱特性 电子陷阱特性 

分 类 号：TM21[一般工业技术—材料科学与工程]