基于光诱导二氧化钒薄膜相变的太赫兹波调制材料研究  

Research on Terahertz Modulator Based on Phase Transition of The Photoinduced Vanadium Dioxide Film

作　　者：张冬煜 彭晓昱[2] 杜海伟[2] 马勇[2,3] 罗春华 ZHANG Dongyu;PENG Xiaoyu;DU Haiwei;MA Yong;LUO Chunhua(School of Optoelectronic Engineering,Changchun University of Science and Technology;Chongqing Institute of Green and Intelligent Technology Chinese Academy of Research Center for Terahertz Technology,Chongqing 400714,Changchun 130022 Sciences;School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065)

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]中国科学院重庆绿色智能技术研究院太赫兹技术研究中心,重庆400714 [3]重庆邮电大学光电工程学院,重庆400065

出　　处：《长春理工大学学报（自然科学版）》2018年第4期12-15,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家重点基础研究发展计划(973计划)(2015CB755401);重庆市基础科学与前沿技术研究专项重点项目(cstc2015jcy j BX0030);国家自然科学基金青年科学基金项目(61405001);重庆市基础与前沿研究计划项目(catc2016jcyja0307)

摘　　要：太赫兹技术在许多领域有非常广泛的应用前景,但高灵敏度的太赫兹探测和调制器件的缺乏限制了其应用范围,尤其是具备超快响应特性的太赫兹波调制器件更为缺乏。文中通过仿真模拟对基于二氧化钒(VO2)薄膜和超材料相结合的光激发快速主动式太赫兹波调制材料进行研究,发现通过改变二氧化钒薄膜厚度可以优化调制深度,改变材料周期结构参数可以改变太赫兹调制频率。这些结果为快速主动式太赫兹波调制器件的设计提供了思路。Terahertz（THz） technology has shown extensive applications in many fields,but applications are limited duo to the lack of highly sensitive THz detectors or modulators,especially lack of the THz modulator with ultrafast response. In this paper,photoinduced fast active THz wave modulation materials based on vanadium dioxide（VO_2） film combined with metamaterial are designed and simulated. It is found that the modulation depth can be optimized by changing the thickness of VO_2 film,while the modulated THz frequency can be adjusted by changing the parameters of the periodic structure. These results provide a possible idea for the design of fast active THz wave modulators.

关 键 词：二氧化钒薄膜 调制器 太赫兹波 

分 类 号：O411.3[理学—理论物理]