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作 者:潘伟伟 张杨 徐林 刘世华 PAN Wei-wei1, ZHANG Yang1 , XU Lin2 , LIU Shi-hua1(1. School of Physics and Electronic Sciences, Guizhou Education University, Guiyang, Guizhou, 550018 ; 2. Guizhou Key Laboratory- of Nanometer Materials Sinmlation and Calculation, Guiyang, Guizhou, 550018)
机构地区:[1]贵州师范学院物理与电子科学学院,贵州贵阳550018 [2]贵州省纳米材料模拟与计算重点实验室,贵州贵阳550018
出 处:《贵州师范学院学报》2018年第6期10-14,共5页Journal of Guizhou Education University
基 金:贵州师范学院自然科学研究基金项目"离子掺杂对铁氧体纳米纤维的磁性质和形貌的影响"(13BS014);贵州省科技厅自然科学研究项目"静电纺丝法制备Ti O2纳米纤维及其光催化应用研究"(黔科合J字[2014]2143)
摘 要:CoFe_2O_4具有优良的磁学性能,是目前应用较广泛的一种铁氧体,通过A位掺杂Zn^(2+)离子可改善CoFe_2O_4的晶体结构和磁性质。采用柠檬酸sol-gel法制备了Co_(1-x)Zn_xFe_2O_4系列样品,用X射线衍射仪、扫描电子显微镜和振动样品磁强计对Co_(1-x)Zn_xFe_2O_4的晶体结构、形貌和磁性质进行表征。结果表明:所有样品均为立方尖晶石结构,样品中引入Zn^(2+)离子导致晶格常数增大。CoFe_2O_4的矫顽力有最大值,Hc=1202.24 Oe;磁滞回线结果表明,随着x的增加,样品的饱和磁化强度Ms先增大后减小,在x=0.4时有最大值,Ms=59.37 emu/g;矫顽力呈单调减小趋势,最后趋近于零。Zn^(2+)能调控CoFe_2O_4的磁性质,在合适的掺杂量下得到需要的磁性质,将有利于CoFe_2O_4在高密度信息存储器件、微波吸波材料和传感器等领域的应用。As a kind ferrite with applications in many fields,CoFe_2O_4 has excellent magnetic properties. The crystal structure and magnetic properties of CoFe_2O_4 can be improved by doping Zn^(2+) ion in A sites. In this study,a series of samples of Co_(1-x)Zn_xFe_2O_4 are synthesized using citric acid sol-gel method,the crystal structure,morphology and magnetic properties of these samples are characterized by X-ray diffraction,scanning electron microscope and vibrating sample magnetometer. The Results show that all samples are cubic spinel structure,and the lattice parameters increases because of the doping of Zn^(2+). The coercitity of CoFe_2O_4 has a maximum value of Hc= 1202. 24 Oe. With increase of x,saturation magnetization Ms initially increases and then decreases with a maximum value of 59. 37 emu/g at x = 0. 4,whereas coercivity decrease monotonously,and eventually approaches to zero. Zn^(2+)can control magnetic properties of CoFe_2O_4,and the required magnetic properties can be obtained under the appropriate doping amount,which will be conducive to the applications of CoFe_2O_4 in high-density information storage devices,microwave absorbing materials and sensors.
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