提高磁控并联电抗器响应速度的方法探讨  

Research on Methods to Improve the Response Time of Magnetically Controlled Shunt Reactor

作　　者：邢珂争 XING Kezheng(State Grid DC Construction Corporation,Beijing 100052,China)

机构地区：[1]国家电网公司直流建设分公司,北京100052

出　　处：《电工技术》2018年第15期33-36,共4页Electric Engineering

摘　　要：介绍了超高压大容量磁控并联电抗器的主电路结构和工作原理,针对其在超/特高压系统应用中存在的响应速度过慢问题,提出了增加直流控制电压、利用充电电容放电、采用直流预偏磁的解决方法,并对比了其在实际应用中的主要优缺点,仿真结果验证了这些方法的有效性。The main circuit and working principle of high capacity Extra-High Voltage magnetically controlled shunt reac tot were introduced. The main problem which response time was too long of its application in the Super/UHV power sys tern was analyzed. Three effective solutions were proposed to this problem： increasing the DC control voltage, making use of the discharge of charging capacitor, adopting the DC magnetic pre bias. The main advantages and disadvantages of the three methods in practical applications were compared and analyzed. The effectiveness of the proposed methods was veri fled through theoretical analysis and simulation results.

关 键 词：磁控并联电抗器 主电路结构 响应速度 直流控制电压 充电电容 直流预偏磁 

分 类 号：TM47[电气工程—电器]