特高压GIL三支柱绝缘子压接工艺研究  

Research on Crimping Technology of UHV GIL Three-pillar Insulator

作　　者：李凯 苗晓军 徐仲勋 宋继光 司晓闯 LI Kai;MIAO Xiaojun;XU Zhongxun;SONG Jiguang;SI Xiaochuang(Pinggao Group Co.,Ltd.,Pingdingshan 467000,China)

机构地区：[1]平高集团有限公司,河南平顶山467000

出　　处：《电工技术》2018年第15期136-138,共3页Electric Engineering

摘　　要：对特高压GIL三支柱绝缘子关键压接工艺参数进行了研究,确定了最优的工艺参数,设计了专用的压接工艺装置并进行了实物压接工艺验证,测试了压接结构的强度。试验结果表明,静态抗压强度可达到46kN以上,远大于设计要求的19.5kN。该工艺已应用于特高压GIL型式试验样机,并顺利通过全套型式试验。The key crimping process parameters of UHV GIL three-pillar insulators were studied. The optimal process parameters was determined and a dedicated crimping process device was designed and manufactured. The physical crim ping process was verified and the strength of the crimped structure was tested. The results showed that the static corn pressive strength was up to above 4GkN, which was far larger than the design requirements 19.5kN. UHV GIL type test prototype using this technology successfully passed the full range of type tests.

关 键 词：压接工艺 顶入力 缩口力 抗压强度 

分 类 号：TM05[电气工程—电工理论与新技术]