高速InGaAs光电探测器γ辐照实验研究  

Research on γ Irradiation of High-Speed InGaAs Photodetector

作　　者：樊鹏 付倩 申志辉[1] 唐艳 柳聪 崔大建 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2018年第4期486-489,共4页Semiconductor Optoelectronics

摘　　要：高速InGaAs光电探测器在天基平台中的应用正逐渐广泛,研究空间辐射环境对高速InGaAs光电探测器性能的影响有着重要意义。采用实时测试法,研究了不同剂量及不同剂量率的γ辐照对高速InGaAs光电探测器响应度、3dB带宽及暗电流特性的影响,通过器件性能实时测试分析发现,器件的暗电流随辐照剂量或剂量率的增加而增大,而响应度、3dB带宽基本不变。As increasing demands for high-speed InGaAs photodetector in space application,it is more significant to research the effect of space radiation on high-speed InGaAs photodetector.Using the real-time measurement,the variation in the responsivity,3 dB bandwidth,dark current of high-speed InGaAs photodetector irradiated with differentγradiation dose and rate was studied.By anaylzing the real-time measurement data,it shows that the dark current rise with the increasing of radiation dose or rate,but the responsivity and saturation optical power slightly change under differentγradiation dose and rate.The results indicate thatγradiation has less effect on high-speed InGaAs photodetector.

关 键 词：高速InGaAs探测器 Γ辐照 在线测试 

分 类 号：TN15[电子电信—物理电子学]