基于等离子体电荷转移调控的抗干扰全息存储研究  

Anti-interference holographic storage based on modulation of plasma charge transfer

作　　者：付申成[1] 刘双燕 张昕彤[1] 刘益春[1] FU Shen-cheng;LIU Shuang-yan;ZHANG Xin-tong;LIU Yi-chun(School of Physics,Northeast Normal University,Changchun 130024,China)

机构地区：[1]东北师范大学物理学院,吉林长春130024

出　　处：《物理实验》2018年第9期1-11,共11页Physics Experimentation

摘　　要：贵金属纳米粒子由于对激发光的偏振类型和波长的有效响应,成为了全息存储介质的优选材料,但目前还未找到有效的方法抑制紫外光对等离子体存储信息的擦除影响,进而其在抗干扰全息存储器件的应用上受到了很大限制.本文从等离子体诱导电荷分离基本原理出发,利用受主中心俘获载流子转移的方法,在传统Ag/TiO2纳米复合薄膜上,实现了存储信息从可擦除到不可擦除的调控.研究表明:多金属氧酸盐基团能有效调控贵金属/半导体系统内部的电荷转移,实现抗紫外线和射线擦除的高性能全息数据存储.The development of holographic storage media is very important,especially for the photochromic systems of noble metal/oxide semiconductors,which have important applications in the field of multi-dimensional data storage due to the effective response of noble metal nanoparticles to the polarization type and wavelength of excitation light.However,an effective method has not been found to suppress the erasure effect of ultraviolet light on the plasma storage information,and its application in anti-interference holographic memory devices has been limited.Based on the principle of plasma-induced charge separation（PICS）,the storage information could be changed from erasable to non-erasable for the traditional Ag/TiO_2 nanocomposite film by the transfer of carrier trapped by the acceptor center.The results showed that the polyoxometalate group could effectively control the charge transfer in the noble metal/semiconductor system and realize high performance holographic data storage of anti-ultraviolet and x-ray erasure.

关 键 词：等离子电荷转移 光致变色 非易失存储 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]