与非型快闪存储器可靠性评价方法分析  

Analysis on Reliability Evaluation Methods of NAND FLASH

作　　者：罗晓羽[1] 刘芳[1] 高硕 

机构地区：[1]中国电子技术标准化研究院 [2]北京兆易创新科技股份有限公司

出　　处：《信息技术与标准化》2018年第7期70-74,共5页Information Technology & Standardization

摘　　要：针对与非型快闪存储器(NAND FLASH)的耐久、数据保持、编程干扰、读干扰等可靠性指标,分析当前可靠性评价中面临的困扰及国内外现有研究基础;根据其失效机理,研究提出各项指标的评价方法,以及试验应力的选取思路。The puzzle of reliability evaluation and the foreign research foundation about endurance, data retention, program disturb, read disturb of NAND FLASH were analyzed. On this basis, the reliability evaluation methods were put forward according to failure mechanism, and the focus is on the ideas of test stress selection.

关 键 词：与非型快闪存储器 耐久 数据保持 干扰 评价 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]