应用于5GHz频段的宽带低噪声放大器设计  

Design of a Wideband Low Noise Amplifierat 5 GHz Band

作　　者：吴晓文 陈晓东[1] 刘轶[3] WU Xiao-wen;CHEN Xiao-dong;LIU Yi(Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China;University of Chinese Academy of Sciences,Beijing 100049,China;Fudan University,Shanghai 201210,China)

机构地区：[1]中国科学院上海高等研究院,上海201210 [2]中国科学院大学,北京100049 [3]复旦大学,上海201210

出　　处：《微电子学与计算机》2018年第9期95-98,共4页Microelectronics & Computer

基　　金：中国亚太经合组织合作基金(Y6260P1401)

摘　　要：针对WLAN 802.11a/ax频段和未来第五代移动通信5GHz以上应用,设计了一款5~6GHz的低噪声放大器(LNA),其工艺基于IBM 0.18μm SiGeBiCMOS工艺.该设计采用共发射极的两级放大结构,第一级采用射极电感负反馈,第二级采用电压并联负反馈,有效优化了噪声系数和线性度.测试结果表明在5~6GHz频率范围内,输入反射系数S11和输出反射系数S22分别小于-14.6dB和-12.8dB,正向增益S21大于10.4dB,噪声系数小于2.7dB.在2.5V工作电压下,功耗为15mW.A low noise amplifier（LNA）for WLAN 802.11 a/axstandard and 5 th-Generation applicationscovering 5 to6 GHz was designed based on IBM 0.18μm SiGeBiCMOS process.The circuit adopted a two-stage and common emitter topology,the first stage used inductor feedback and the second stage used voltage shunt feedback which improvednoise figure and linearity.The proposed LNA had an input reflection coefficient and output reflection coefficient of-14.6 dB and-12.8 dB respectively from 5 to 6 GHz,the gain is 10.4 dB,and the noise figure is less than 2.7 dB.The proposed LNA consumed 15 mW power at 2.5 VDC supply.

关 键 词：SiGeBiCMOS 低噪声放大器 无线局域网 宽带 

分 类 号：TN722.3[电子电信—电路与系统]