Probing defects in ZnO by persistent phosphorescence  

作　　者：Honggang Ye Zhicheng Su Fei Tang Yitian Bao Xiangzhou Lao Guangde Chen Jian Wang Shijie Xu 

机构地区：[1]Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China [2]Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China

出　　处：《Opto-Electronic Advances》2018年第6期8-13,共6页光电进展（英文）

基　　金：This work was supported by a Hong Kong RGC-GRF Grant （Grant No. HKU 705812P）, and National Natural Science Foundation of China （Grant No. 11374247, 11204231, 21373156）.

摘　　要：Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm （-2.267 eV） in intentionally undoped ZnO single crystal by selecting the below-band-gap （BBG） optical excitations （e.g. light wavelengths of 385 nm and 450 nm）. Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.

关 键 词：zinc oxide DEFECTS PHOSPHORESCENCE PHOTOLUMINESCENCE 

分 类 号：TN29[电子电信—物理电子学]