高可靠性1060 nm单横模半导体激光器  

High Reliability 1 060 nm Single Lateral Mode Semiconductor Lasers

作　　者：张岩[1] 王彦照[1] 李庆伟[1] 宁吉丰[1] 赵润[1] Zhang Yan;Wang Yanzhao;Li Qingwei;Ning Jifeng;Zhao Run(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所

出　　处：《半导体技术》2018年第9期659-663,共5页Semiconductor Technology

摘　　要：研制了一款基于In Ga As/Ga As P应变补偿量子阱结构的1 060 nm单横模半导体激光器,并采用金属有机物化学气相沉积（MOCVD）方法实现了外延生长。使用张应变的Ga As P势垒层对量子阱的应变进行补偿,并优化了MOCVD外延生长条件。所制备的单横模激光器的脊宽为4μm,腔长为2 mm,25℃时测得其阈值电流为23 m A,最大斜率效率为1 W/A,直流电流为500 m A时光功率为437 mW。脉冲驱动时,器件最高输出功率达到1.2 W,并未发生腔面光学灾变损伤失效。器件快慢轴发散角分别为46.3°和7.4°,65℃时,器件的输出功率为270 mW。采用高温加速老化试验对器件的可靠性进行了评估,试验器件在3 150 h内未发生失效,功率缓慢退化速率为5×10-6h-1。A 1 060 nm single lateral mode semiconductor laser with InGaAs/GaAsP strain compensated quantum well structure was fabricated and the epitaxial growth was achieved by metal organic chemical vapor deposition（ MOCVD）. The strain of the quantum well was compensated by using a tensile strain GaAsP barrier layer,and the epitaxial growth conditions of the MOCVD were optimized. The ridgewaveguide laser with 4 μm width and 2 mm cavity length exhibits threshold current of 23 m A,maximum slope efficiency of 1 W/A at 25 ℃,and a light power of 437 m W under CW driver current of 500 mA.The maximum output power of the device under pulse driver is up to 1. 2 W without abrupt failure related to catastrophic optical mirror damage. The fast and slow axes divergence angles of the device are 46. 3°and 7. 4°,respectively,and the output power of the device is 270 m W at 65 ℃. The reliability of the device was evaluated by the high temperature accelerated aging test,the test devices have no failure within3 150 h and the degradation rate of the power is 5×10^（-6） h^（-1）.

关 键 词：半导体激光器 应变补偿 单横模 可靠性 高功率 

分 类 号：TN248.4[电子电信—物理电子学]