28 nm工艺开发中的器件局域失配研究  

Investigation on Device Local Mismatching in 28 nm Process Development

作　　者：蔡恩静 高金德 朱巧智 魏文 李强 Cai Enjing;Gao Jinde;Zhu Qiaozhi;Wei Wen;Li Qiang(Shanghai Huali Microelectronics Corporation,Shanghai 201203,China)

机构地区：[1]上海华力微电子有限公司

出　　处：《半导体技术》2018年第9期714-719,共6页Semiconductor Technology

摘　　要：在集成电路28 nm和14 nm等先进制造工艺开发中,采用纳米探针锁定失配器件后,依然无法通过物性分析找出失效原因,成为提升低压良率的最大瓶颈。通过对存储失效单元器件特性的分析提出了失效模型,采用计算机辅助设计技术（TCAD）工具对器件失配进行模拟,给出失效现象的直观解释和工艺改善方向并优化了工艺条件。结果表明在常规器件分析流程中引入TCAD器件模拟是一种更有效的研究低压良率器件局域失配的方法,能大大缩短工艺开发周期。同时,采用热运动的麦克斯韦-玻耳兹曼分布对器件局域失配进行讨论计算,认为注入杂质热运动引起的扩散是导致因离子注入随机波动引起器件局域失配的主导因素。In the development of advanced processes such as integrated circuits 28 nm and 14 nm technology,after using nano-probes to lock mismatched devices,it is still impossible to find the failure cause through physical property analysis,which becomes the biggest bottleneck for low-voltage yield improvement. A failure model was proposed by analyzing the characteristics of the failure storage unit. The TCAD tool was used to simulate the device mismatch,and the visual interpretation,process improvement direction and specific optimization process conditions were given. The results show that applying the TCAD simulation in traditional device analysis flow is an effective method to study the local mismatch of low-voltage yield devices,which can greatly shorten the process development cycle. Meanwhile,the Maxwell-Boltzmann distribution of the thermal motion was used to discuss and calculate the local mismatch of the device,revealing that the diffusion caused by the thermal motion of the implanted impurity is the dominant factor leading to the device local mismatch due to the random dopant fluctuation.

关 键 词：低压(Vmin)良率 器件局域失配 离子注入随机波动(RDF) 计算机辅助设计技术(TCAD)模拟 麦克斯韦-玻耳兹曼分布 

分 类 号：TN407[电子电信—微电子学与固体电子学] TP333[自动化与计算机技术—计算机系统结构]