RC缓冲电路对GaN E-HEMTs开关电压振荡影响分析  

Analysis of Impact of RC Snubber Circuit on Switching Voltage Oscillation of GaN E-HEMTs

作　　者：郭小强[1,2] 王学惠 伞国成 张纯江[1,2] GUO Xiao-qiang;WANG Xue-hui;SAN Guo-cheng;ZHANG Chun-jiang(Yanshan University,Qinhuangdao 066004,China)

机构地区：[1]燕山大学,电气工程学院,河北秦皇岛066004 [2]安徽省工业节电与电能质量控制协同创新中心,安徽合肥230601

出　　处：《电力电子技术》2018年第9期21-23,共3页Power Electronics

基　　金：安徽省工业节电与电能质量控制协同创新中心开放课题基金(KFKT201803);河北省引进留学人员资助项目(CL201622)

摘　　要：相对于传统硅(Si)器件,氮化镓(GaN)功率器件有着更优越的性能,包括更高的开关频率和功率密度及更低的开关损耗等特点。由于高速的开关特性,器件的寄生电容与线路中的寄生电感会发生谐振,从而导致器件两端电压发生过冲和振荡的现象。此处利用一种双脉冲测试电路,对GaN器件的开关过程进行建模分析,设计合理的缓冲电路有效抑制电压过冲和振荡的问题。最后利用GS66504B GaN E-高电子迁移晶体管(HEMTs)评估板,对缓冲电路设计参数进行实验研究并修正,实验结果验证了缓冲电路方案的有效性。In contrast to traditional silicon （Si） devices, the gallium nitride （GaN） power devices have superior perfor- mance,including higher switching frequency,power density and lower switching losses and so on.Due to the high speed switching characteristic, the parasitic capacitance of the device and the parasitic inductance of the power cir- cuit will result in resonance which leads to the voltage overshoot and oscillations of the switch.A double pulse test circuit is used to model and the switching process of GaN devices is analyzed.A reasonable snubber circuit is de- signed to effectively alleviate the voltage overshoot and oscillation.Finally,a GS66504B GaN E-high electron mobility transistors（HEMTs） evaluation board is used for test.The design parameters of the snubber circuit is tested and correct- ed.The experimental results verify the effectiveness of the snubber circuit.

关 键 词：功率器件 双脉冲测试电路 缓冲电路 

分 类 号：TN3[电子电信—物理电子学]