Mg掺杂量对Zn1-xMgxO缓冲层及其Cu(In，Ga)Se2太阳电池性能的影响  

The Influence of Mg Doping Amount on the Property of Zn_(1-x)Mg_xO Buffer Layer and Its Application in Cu(In,Ga)Se_2 Solar Cells

作　　者：吴文文[1] 沈鸿烈[1,2] 陈洁仪 商慧荣[1] 孙孪鸿 高凯 李玉芳 WU Wen-wen;SHEN Hong-lie;CHEN Jie-yi;SHANG Hui-rong;SUN Luan-hong;GAO Kai;LI Yu-fang(Jiangsu Key Laboratory of Materials and Techology for Energy Conversion,College of Materials Science and Techology,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China;State Key Laboratory of Advanced Technology for Float Glass,Bengbu Design ＆ Research Institute for Glass Industry,Bengbu,Anhui 233018,China)

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏省能量转化材料与技术重点实验室,南京211106 [2]蚌埠工业设计院浮法玻璃新技术国家重点实验室,安徽蚌埠233018

出　　处：《光子学报》2018年第8期275-283,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(No.61774084),江苏省前瞻性联合创新项目(No.BY2016003-09)和浮法玻璃新技术国家重点实验室开放课题(No.2017KF02)资助

摘　　要：采用低成本溶胶凝胶旋涂法制备了不同Mg含量的Zn_(1-x)Mg_xO薄膜,用其代替传统化学水浴法制备的CdS作为铜铟镓硒(Cu(In,Ga)Se_2,CIGS)薄膜太阳电池的缓冲层材料.用X射线衍射仪、原子力显微镜、紫外可见吸收光谱和X射线光电子能谱仪等研究了Mg掺杂量对Zn_(1-x)Mg_xO薄膜的结构、形貌、光学性能及Zn_(1-x)Mg_xO/CIGS异质结之间能带排列的影响.结果表明:所制备的Zn_(1-x)Mg_xO薄膜均为非晶结构;随着Mg掺入量的增加,Zn_(1-x)Mg_xO薄膜的表面形貌由条纹状变为六方形纳米颗粒,表面粗糙度由23.53nm减小到1.14nm;光学带隙值由3.55eV增大到3.62eV;Zn_(1-x)Mg_xO/CIGS之间的导带偏移值由+0.68eV减小到-0.33eV,导带排列由"尖峰状"变为"悬崖状";当配制的溶液中Mg源和Zn源的摩尔比为0.1时,所制备的Zn0.82Mg0.18O/CIGS之间的导带偏移值为+0.22eV,电池效率最高,达5.83%.Zn1-xMgxO thin films have been prepared by sol-gel spin-coating technique instead of the CdS buffer layers synthesized by conventional chemical bath deposition for Cu（In, Ga） Se2 （CIGS） solar ceils. The effects of Mg doping amount on the structural, morphological, optical properties of Zn1-xMgxO films and band alignment of Zn1-xMgxO/CIGS are investigated by X-ray diffraction, Atmoic force microscope, UV-vis-NIR spectroscopy and X-ray photoelectron spectroscopy. The results show that these properties changed with the increase of Mg. All the films are amorphous. The surface morphology changes from stripe to hexagon nanoparticles and the surface roughness decreases from 23.53 nm to 1.14 nm. The optical band gap increases from 3.55 eV to 3.62 eV and conduction band offsets changes from ＋0.68 eV to -0.33 eV. Accordingly, the band alignment of Zn1-xMgxO/CIGS changes from ＂spike-like＂ to ＂cliff-like＂. An efficiency of up to 5.83% is achieved for a CIGS solar cell with a Zn1-xMgxO （using a molar ratio 0.1 of the Mg source and the Zn source in the precusor solution） buffer layer, which is attributed to the optimized conduction band offset of ＋0.22 eV at the Zn1-xMgxO/CIGS interface.

关 键 词：薄膜 缓冲层 溶胶凝胶法 Zn1-xMgxO 表面粗糙度 能带结构 导带偏移值 

分 类 号：TB34[一般工业技术—材料科学与工程]