Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires  

作　　者：Xia Guo Qiao-Li Li Chong Li An-Qi Hu Hui-Jun Tian Chun-Wei Guo Xiao-Ying He Hua Wu 郭霞;刘巧莉;田慧军;郭春威;李冲;胡安琪;何晓颖;武华(School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications;School of Electronic Information and Control Engineering, Beijing University of Technology;College of Physics and Electronic Information, Gannan Normal University)

机构地区：[1]School of Electronic Engineering,State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China [3]College of Physics and Electronic Information,Gannan Normal University,Ganzhou 341000,China

出　　处：《Chinese Physics B》2018年第9期620-625,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400603);the National Natural Science Foundation of China(Grant No.61335004)

摘　　要：Silver nanowire（AgNW） networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide（ITO） and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements.The enhancement ratio of the light output power decreased as the Ga P layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for Ga P layer thicknesses of 0.5 μm, 1 μm, and 8 μm, respectively, when an AgNW network was included in Al Ga In P light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the Ga P layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.Silver nanowire（AgNW） networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide（ITO） and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements.The enhancement ratio of the light output power decreased as the Ga P layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for Ga P layer thicknesses of 0.5 μm, 1 μm, and 8 μm, respectively, when an AgNW network was included in Al Ga In P light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the Ga P layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.

关 键 词：surface plasmon current spreading silver nanowire light-emitting diode 

分 类 号：TN312.8[电子电信—物理电子学] TN31