Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys  

作　　者：YUAN YUAN JIYUAN ZHENG YAOHUA TAN YIWEI PENG ANN-KATHRYN ROCKWELL SETH R. BANK AVIK GHOSH JOE C. CAMPBELL 

机构地区：[1]Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA [2]Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA

出　　处：《Photonics Research》2018年第8期794-799,共6页光子学研究（英文版）

基　　金：Defense Advanced Research Projects Agency(DARPA)(W911NF-10-1-0391);Army Research Office(ARO)(W911NF-10-1-0391)

摘　　要：Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In_(0.52)Al_(0.48) As and Al_(0.74)Ga_(0.26) As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.Digital alloy In0.52Al0.48As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In0.52Al0.48As and Al0.74Ga0.26As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.

关 键 词：超额噪声 通讯技术 发展现状 技术创新 

分 类 号：TN92[电子电信—通信与信息系统]