检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:YUE ZHAO JIN-CHUAN ZHANG CHUAN-WEI LIU NING ZHUO SHEN-QIANG ZHAI LI-JuN WANG JuN-QI LIU SHU-MAN LIU FENG-QI LIU ZHAN-GUO WANG
机构地区:[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China [3]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
出 处:《Photonics Research》2018年第8期821-824,共4页光子学研究(英文版)
基 金:National Natural Science Foundation of China(NSFC)(61435014,61574136,61627822,61774146,61790583);Chinese Academy of Sciences Key Project(CAS Key Project)(QYZDJ-SSW-JSC027,ZDRW-XH-2016-4);Natural Science Foundation of Beijing Municipality(4172060)
摘 要:Power scaling in a broad area quantum cascade laser(QCL) tends to deteriorate beam quality with the emission of a multiple-lobe far-field pattern. In this paper, we demonstrate a coupled ridge waveguide QCL array consisting of five elements with chirped geometry. In-phase mode operation is secured by managing supermode loss with properly designed geometries of ridges. A single-lobe lateral far-field with a near diffraction limited beam pattern was obtained in the whole current dynamic range. The devices were fabricated with the wet and dry etching method. The regrowth technique of the In P:Fe insulation layer and In P:Si waveguide layer was employed.Such a structure has the potential to optimize the beam quality of the recently reported high-power broad-area QCL with a reduced cascade number.Power scaling in a broad area quantum cascade laser (QCL) tends to deteriorate beam quality with the emission of a multiple-lobe far-field pattern. In this paper, we demonstrate a coupled ridge waveguide QCL array consisting of five elements with chirped geometry. In-phase mode operation is secured by managing supermode loss with properly designed geometries of ridges. A single-lobe lateral far-field with a near diffraction limited beam pattern was obtained in the whole current dynamic range. The devices were fabricated with the wet and dry etching method. The regrowth technique of the InP:Fe insulation layer and InP:Si waveguide layer was employed. Such a structure has the potential to optimize the beam quality of the recently reported high-power broad-area QCL with a reduced cascade number.
分 类 号:TN248[电子电信—物理电子学] TN92
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:3.16.44.204