Surface roughness modulated resistivity in copper thin films  

作　　者：HongKang Song Ke Xia Jiang Xiao 

机构地区：[1]Department of Physics, Beijing Normal University, Beijing 100875, China [2]Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China [3]Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2018年第10期70-77,共8页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11722430,11734004,61774017,21421003,and11474065);the National Key Research Program of China(Grant Nos.2016YFA0300702,and 2017YFA0303300);the National Basic Research Program of China(Grant No.2014CB921600)

摘　　要：The surfaces of metallic thin films are never flat. The resistivity in thin films is very different from that in bulk because of the unavoidable rough surfaces. In this study, we apply a quantum-mechanical method to study the resistivity in metallic thin films.The resulting resistivity formula for metallic thin films merely involves two parameters: bulk relaxation time and surface roughness. We use the formula to fit a large number of experimental data sets for copper thin films obtained using different growing methods. With an additional tuning parameter for calibrating the film thickness, the quantum formula can provide a universal fitting to most data with a satisfactory precision, regardless of their growing methods or data source.The surfaces of metallic thin films are never flat. The resistivity in thin films is very different from that in bulk because of the unavoidable rough surfaces. In this study, we apply a quantum-mechanical method to study the resistivity in metallic thin films. The resulting resistivity formula for metallic thin films merely involves two parameters： bulk relaxation time and surface roughness. We use the formula to fit a large number of experimental data sets for copper thin films obtained using different growing methods. With an additional tuning parameter for calibrating the film thickness, the quantum formula can provide a universal fitting to most data with a satisfactory precision, regardless of their growing methods or data source.

关 键 词：thin film thickness dependent RESISTIVITY surface roughness 

分 类 号：O413.1[理学—理论物理] O484[理学—物理]