Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity  

作　　者：Zidong ZHANG Juehan YANG Fuhong MEI Guozhen SHEN 

机构地区：[1]State Key Laboratory for Superlattices and Microstmctures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China [3]College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100029, China

出　　处：《Frontiers of Optoelectronics》2018年第3期245-255,共11页光电子前沿（英文版）

摘　　要：Longitudinal twinning α-In2Se3 nanowires with the （10T 8） twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized a-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2-V1. S-1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared （UV-visible-NIR） region. Besides, the fabricated device showed a high responsivity of 8.57 × 10^5 A·W^-1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 ×10^12 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nano- wires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.Longitudinal twinning α-In2Se3 nanowires with the （10T 8） twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized a-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2-V1. S-1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared （UV-visible-NIR） region. Besides, the fabricated device showed a high responsivity of 8.57 × 10^5 A·W^-1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 ×10^12 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nano- wires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.

关 键 词：PHOTODETECTORS NANOWIRES TWINNING ultravio-let-visible-near-infrared （UV-visible-NIR） 

分 类 号：TN215[电子电信—物理电子学] TN948.4