Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application  被引量:1

Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application

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作  者:A.Derbali H.Saidi A.Attaf H.Benamra A.Bouhdjer N.Attaf H.Ezzaouia L.Derbali M.S.Aida 

机构地区:[1]Laboratory of Thin Films and Applications LPCMA, University of Biskra, Algeria, BP 145 RP, 07000 Biskra, Algerie [2]Laboratoire de Couches Minces et Interfaces Faculte des Sciences Universite de Constantine, Algeria [3]Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Centreof Energy, Borj,Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia [4]Department of Physics Faculty of Sciences, King Abdulaziz University, Djeddah, KSA

出  处:《Journal of Semiconductors》2018年第9期1-7,共7页半导体学报(英文版)

摘  要:The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM), optical transmittance spectroscopy(UV–V) and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the(111) direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10^5 and 11 × 10^5 Ω·cm.The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM), optical transmittance spectroscopy(UV–V) and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the(111) direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10^5 and 11 × 10^5 Ω·cm.

关 键 词:zinc sulphide X-ray diffraction ultrasonic spray solution flow rate optical and electrical properties 

分 类 号:TN304.055[电子电信—物理电子学]

 

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