Low voltage floating gate MOSFET based current differencing transconductance amplifier and its applications  

Low voltage floating gate MOSFET based current differencing transconductance amplifier and its applications

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作  者:Charu Rana Dinesh Prasad Neelofar Afzal 

机构地区:[1]ECE Department,Faculty of Engineering and Technology, Jamia Millia Islamia

出  处:《Journal of Semiconductors》2018年第9期22-28,共7页半导体学报(英文版)

摘  要:This article presents a low voltage low power configuration of current differencing transconductance amplifier(CDTA)based on floating gate MOSFET.The proposed CDTA variant operates at lower supply voltage±1.4 V with total static power dissipation of 2.60 mW due to the low voltage feature of floating gate MOSFET.High transconductance up to 6.21 mA/V is achieved with extended linear range of the circuit i.e.±130μA.Two applications are illustrated to demonstrate the effectiveness of the proposed active block.A quadrature oscillator is realized using FGMOS based CDTA,two capacitors,and a resistor.The resistor is implemented using two NMOSFETs to provide high linearity and tunablility.Another application is the Schmitt trigger circuit based on the proposed CDTA variant.All circuits are simulated by using SPICE and TSMC 130 nm technology.This article presents a low voltage low power configuration of current differencing transconductance amplifier(CDTA)based on floating gate MOSFET.The proposed CDTA variant operates at lower supply voltage±1.4 V with total static power dissipation of 2.60 mW due to the low voltage feature of floating gate MOSFET.High transconductance up to 6.21 mA/V is achieved with extended linear range of the circuit i.e.±130μA.Two applications are illustrated to demonstrate the effectiveness of the proposed active block.A quadrature oscillator is realized using FGMOS based CDTA,two capacitors,and a resistor.The resistor is implemented using two NMOSFETs to provide high linearity and tunablility.Another application is the Schmitt trigger circuit based on the proposed CDTA variant.All circuits are simulated by using SPICE and TSMC 130 nm technology.

关 键 词:floating gate MOSFET current differencing transconductance amplifier low voltage low power 

分 类 号:TN722[电子电信—电路与系统] TN722.77

 

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