石墨烯转移工艺对石墨烯传感器检测汞离子的影响  

Effects of transfer methods on mercury ion detection by graphene sensors

作　　者：李小晴 叶辰 林正得 江南 LI Xiaoqing;YE Chen;LIN Zhengde;JIANG Nan(Division of Surface Engineering and Remanufacturing,Ningbo Institute of Industrial Technology,Ningbo 315201,China;College of Materials Science and Opto-Electronie Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所表面工程事业部,浙江宁波315201 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《材料科学与工艺》2018年第4期8-13,共6页Materials Science and Technology

基　　金：国家自然科学基金(51573201;51501209;201675165);中国科学技术部国际科技合作项目(2015DFA50760)

摘　　要：本工作采用化学气相沉积法(CVD)石墨烯制备场效应晶体管(FET)传感器,在石墨烯表面修饰DNA,用于检测汞离子.为探索转移方法对石墨烯传感器件性能的影响,制备了3种不同转移工艺的石墨烯样品,分别是PMMA转移方法中退火烧除PMMA的石墨烯、用丙酮洗去PMMA的石墨烯和Au转移的石墨烯,对石墨烯样品进行拉曼光谱、分光光度计、光学显微镜(OM)、扫描探针显微镜(SPM)的表征.通过FET转移特性曲线的输出,得到汞离子对石墨烯掺杂情况的变化,从而考察了各种石墨烯传感器对汞离子的检测性能.结果表明,Au转移的石墨烯表面清洁程度最佳,SPM图像显示其表面平坦无杂质,表面粗糙度(Ra)仅为0.45 nm.用该种石墨烯制备的传感器件对汞离子检测的检测限达10 p M,且FET的狄拉克点变化也最大,达-0.132 V.In this work,chemical vapor deposition（CVD） graphene was decorated with DNA to fabricate field effect transistor（FET） sensors for mercury ion detection. To figure out the effects of different samples on the detection of Hg^2＋,this study exploited three different samples： the sample on which PMMA was burned,the sample on which PMMA was washed by acetone and the sample which was transferred by Au. The quality of the graphene was characterized by Raman spectroscopy,spectrophotometer,optical microscope as well as scanning probe microscopy. Three different devices were fabricated by corresponding samples. Through the FET transfer curves,different doping conditions of graphene were obtained,and the detetion performance of various graphene sensors was investigated. It was shown that the sample which was transferred by Au had the cleanest surface. In the corresponding device,the detection limit of Hg^2＋could achieve 10 p M,and the change of Dirac point was the largest which was up to-0. 132 V.

关 键 词：无机质材料 石墨烯 传感器 DNA 汞离子 

分 类 号：TB321[一般工业技术—材料科学与工程]