短沟道MOSFET源漏寄生电阻的二维半解析模型  

A 2D Semi-analytical Model of the Source/Drain Parasitic Resistance for the Short-channel MOSFETs

作　　者：常红 王亚洲 柯导明[2] CHANG Hong;WANG Yazhou;KE Daoming(The 58th Research Institute of China Electronics Technology Group Corporation（CETC）,Wuxi,Jiangsu,204000,CHN;School of Electronics and Information Engineering,Anhui University,Hefei,230601,CHN)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214000 [2]安徽大学电子信息工程学院,合肥230601

出　　处：《固体电子学研究与进展》2018年第4期251-256,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61376098;61076086);安徽教育厅自然科学研究重点项目(2006kj012a)

摘　　要：根据金属氧化物半导体场效应晶体管(MOSFET)的工作原理,在MOSFET的源/漏区域引入了矩形等效源,提出了源/漏电阻的二维定解问题。通过用分离变量法、傅里叶展开和积分方程相结合建立MOSFET源/漏电阻的二维半解析模型,得到了源/漏电阻与几何尺寸之间的关系。该模型避免了数值分析时的方程的离散化,且具有较高的精度。计算和仿真结果表明,模型计算出的源/漏电阻阻值接近于Silvaco的仿真值。Based on the principle of the metal-oxide-semiconductor field effect transistor（MOSFET）,a definite solution problem of potential was proposed by introducing an rectangular source in drain/source region.By the variables separation method,Fourier expansion method and the integral equation,the potential distribution of source/drain region and 2 Dsemi-analytical model of RSDwere obtained,which reflected the relationship between the RSDand the device geometry.The proposed model can be calculated directly avoiding discretization of numerical analysis and it keeps the same accuracy as that of the numerical solution.It is shown that the calculated results of the model are consistent with the simulation results of silvaco software.

关 键 词：金属氧化物半导体场效应晶体管 源/漏寄生电阻 半解析模型 电势 

分 类 号：TN301[电子电信—物理电子学]