IGBT门氧层老化故障模拟及其对开通特性的影响  

Simulation of IGBT Gate Oxide Aging Failure and its Effect on Turn-on Characteristics

作　　者：张忻庾 向大为[1] 钟响 ZHANG Xin-yu;XIANG Da-wei;ZHONG Xiang(College of Electronics and Information Engineering,Tongji University,Shanghai 201804)

机构地区：[1]同济大学电子与信息工程学院,上海201804

出　　处：《新型工业化》2018年第8期17-22,共6页The Journal of New Industrialization

摘　　要：IGBT作为中大功率变换器的核心器件,广泛应用于柔性直流输电、新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域,其运行可靠性对确保系统安全、可靠、高效运行具有重要意义。门氧层是IGBT中相对薄弱的环节,有必要对门氧层老化故障开展相关研究。首先,讨论了门氧层老化的机理;其次,分析了门氧层老化故障对IGBT开通特性的影响;然后,研究了IGBT门氧层老化故障的模拟方法;最后,通过实验研究IGBT门氧层老化故障对其开通特性的影响。论文的研究工作有助于IGBT门氧层老化故障的早期预诊断,具有一定理论意义与工程价值。As the core device of medium and/or large power converters, IGBTs are widely applied in many important fields such as flexible direct current transmission, renewable energy power generation, railway locomotive traction, electric vehicle drive, and aerospace. The reliability of IGBTs is significant for ensuring the safety, reliability and efficiency of the whole system. The gate oxide layer is a relatively fragile part of the IGBT power module, which is studied in this paper. Firstly, the aging mechanism of gate oxide layer is discussed. Secondly, the effect of gate oxide aging on IGBT turn-on characteristics is analyzed. Then, the simulation method of IGBT gate oxide aging is studied. Finally, the effect of IGBT gate oxide aging failure on its turn-on characteristics is studied experimentally. The research results of this paper could be helpful for IGBT failure prognosis, which has certain theoretical significance and engineering value.

关 键 词：IGBT门氧层老化故障 IGBT开通特性 故障模拟 故障预诊断 

分 类 号：TM23[一般工业技术—材料科学与工程]