The impact of Al_2O_3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se_2 solar cells  

作　　者：LIU Yang LIU Wei CHEN Meng-xin SHI Si-han l HE Zhi-hao GONG Jln-long WANG Tuo ZHOU Zhi-qiang LIU Fang-fang SUN Yun and XU Shu 刘杨;刘玮;陈梦馨;史思涵;何志超;巩金龙;王拓;周志强;刘芳芳;孙云;徐术(Tianjin Key Laboratory of Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University;Key Laboratory for Green Chemical Technology of Ministry of Education,Collaborative Innovation Center of Chemical Science and Engineering (Tianjin),School of Chemical Engineering and Technology,Tianjin University;Davidson School of Chemical Engineering,Purdue University)

机构地区：[1]Tianjin Key Laboratory of Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China [2]Key Laboratory for Green Chemical Technology of Ministry of Education,Collaborative Innovation Center of Chemical Science and Engineering（Tianjin）,School of Chemical Engineering and Technology,Tianjin University,Tianjin 300072,China [3]Davidson School of Chemical Engineering,Purdue University,West Lafayette IN47907,USA

出　　处：《Optoelectronics Letters》2018年第5期363-366,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61774089 and 61504067);the Yang Fan Innovative & Entrepreneurial Research Team Project(No.2014YT02N037)

摘　　要：With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is se- vere, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare A12O3 by atomic layer deposition （ALD）, and investigate the effect of its thickness on the performance of Cu（In,Ga）Se2 （CIGS） solar cell. The device recombination activation energy （EA） is increased from 1.04 eV to 1.11 eV when the thickness of A12O3 is varied from O nm to 1 nm, and the height of back barrier is decreased from 48.54 meV to 38.05 meV. An effi- ciency of 11.57 % is achieved with 0.88-1ma-thick CIGS absorber layer.

关 键 词：太阳能电池 低温度 CU 接口 GA 生长 吸收器 厚度 

分 类 号：TM914.42[电气工程—电力电子与电力传动]