毫米波器件与电路技术  

Technology of millimeter-wave devices and circuits

作　　者：孙再吉 

机构地区：[1]电子第55研究所,江苏南京210016

出　　处：《微纳电子技术》2002年第9期9-13,共5页Micronanoelectronic Technology

摘　　要：阐述了近来毫米波器件及电路的技术动向。异质结FET和HBT在InP系突现出优越的性能,在GaAs系已完全进入系统应用阶段。在此应用观点的影响下,相继开发成功了宽带无线通信系统和车载雷达用的CPWMMIC芯片以及倒装片封装模块。Recent technology trends in millimeter-wave devices and circuits are described.As for heterojunction FET and HBT,performances of InP based devices are markedly progressed.GaAs based device,on the other hand,are in the stage of system applications.In this aspect,circuits have been designed considering assembling into modules.MMIC chipsets and flip-chip modules for broad band wireless communications and automotive radars have been realized.

关 键 词：毫米波器件 电路技术 异质结场效应管 异质结双极晶体管 

分 类 号：TN386[电子电信—物理电子学] TN322.8