射频功率放大器稳定性的分析与设计  

The Study and Design of the Stability of RF Power Amplifier

作　　者：韩月 丛密芳[1] 李科[1] 杜寰[1] HAN Yue;CONG Mi-fang;LI Ke;DU Huan(The New Technology Development Department,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 101408,China)

机构地区：[1]中国科学院微电子研究所新技术开发部,北京100029 [2]中国科学院大学,北京101408

出　　处：《微电子学与计算机》2018年第10期72-74,79,共4页Microelectronics & Computer

摘　　要：射频功率放大器的稳定性极大的影响了通信系统性能的可靠性,是通信系统中的重要组件.基于自主研发的RF-LDMOS器件,利用ADS软件设计了一款射频功率放大器,并研究了其稳定性.采用在栅极增加R-C并联电路的方法,改善功率放大器在100~200MHz之间的稳定性.实验结果表明,R-C并联网络的阻抗在低于转折频率时为电阻型,高于转折频率时为电容型,因此在低频可以降低不需要的增益,而对工作频带内的增益和驻波性能没有明显影响.改善后的功率放大器在100~200MHz频段增益达到17.4dB以上,可稳定输出37.4dBm以上功率.The RF Power Amplifier is an important component, whose stability can greatly affect the reliability of the communication system. Based on the self-designed RF-LDMOS device, a RF power amplifier was designed by ADS and its stability was studied. The R-C parallel circuit was added in the gate to improve the stability of the power amplifier in the 100MHz-200MHz band. Experience shows that the R-C parallel circuit performed as resistance when the frequency was under the transition frequency and performed as capacitance to the contrary. As a result, the R-C parallel circuit can effectively reduce the gain in low frequency with having no influence in the working frequency. The improved power amplifier has a stable gain of more than 17.4 dB in the 100 MHz 200 MHz band, and the output power of over 37.4 dBm.

关 键 词：射频功率放大器 RF-LDMOS 稳定性 R-C并联电路 

分 类 号：TN47[电子电信—微电子学与固体电子学]