等离子体射流阵列辅助薄膜沉积对环氧树脂表面电气特性的影响  

Effect of Plasma Jet Array Assisted Film Deposition on Epoxy Resin Surface Electrical Characteristics

作　　者：马翊洋 章程[2,3] 孔飞 王婷婷 陈根永 邵涛[2,3] MA Yiyang;ZHANG Cheng;KONG Fei;WANG Tingting;CHEN Genyong;SHAO Tao(School of Electrical Engineering,Zhengzhou University,Zhengzhou 45000 I,China;Institute of Electrical Engineering,Chi-nese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100190,China;China Southern Power Grid Technology Research Center,Guangzhou 510663,China)

机构地区：[1]郑州大学电气工程学院,郑州450001 [2]中国科学院电工研究所,北京100190 [3]中国科学院大学,北京100190 [4]中国南方电网有限责任公司电网技术研究中心,广州510663

出　　处：《高电压技术》2018年第9期3089-3096,共8页High Voltage Engineering

基　　金：国家自然科学基金面上项目(11575194);国家重点基础研究发展计划(973计划)(2014CB239505-3);特高压工程技术(昆明、广州)国家工程实验室项目(NEL201703)~~

摘　　要：直流电场下的绝缘材料表面电荷积聚现象对电气设备的安全运行造成威胁。为了加快环氧树脂（ER）表面电荷的消散,文中采用纳秒脉冲电源激励的大气压等离子体射流（APPJ）阵列,对环氧树脂表面进行扫描处理,沉积SiOx薄膜,之后利用傅里叶变换红外光谱仪（FTIR）、扫描电子显微镜（SEM）、高阻计、表面电位测试系统等装置对改性前后的样品表面理化特性进行表征分析。实验结果表明：射流阵列扫描沉积在环氧树脂表面引入了Si—O—Si、Si—OH和OH等基团,并且形成的薄膜使材料表面粗糙度降低。改性后的环氧树脂表面电导率提升2～3个数量级,使表面电荷初始积聚量减少,消散速度加快,陷阱能级的深度与密度均有所降低,闪络电压由未处理时的-6.5 kV提升至扫描沉积4次时的-9.3 kV。相对于单管射流改性,射流阵列可产生更大面积的低温等离子体,具有更高的处理效率和实用性。Under DC electric field, surface charges are likely to accumulate on insulating materials, which pose a great threat to the safe operation of electrical equipment. In order to accelerate the surface charge dissipation on the epoxy resin（ER）, an atmospheric-pressure plasma jet（APPJ） array driven by nanosecond-pulse power supply was used for Si Ox thin film deposition on its surface. The surface properties of the sample were analyzed by using Fourier Transformed Infrared（FTIR）, scanning electron microscope（SEM）, high impedance meter, and the surface potential measurement system. Experimental results show that Si—O—Si, Si—OH and OH groups are introduced on the epoxy resin surface by APPJ array deposition and reduce the roughness of EP samples. The surface conductivity is increased by 2～3 orders of magnitude. Therefore, it can be seen that the initial surface charge accumulation is improved and the dissipation of surface charge is accelerated after the deposition.The depth and density of trap level decrease. Furthermore, the flashover voltage increases from-6.5 kV for the untreated sample to-9.3 kV for the deposited samples. Compared with the single tube plasma jet modification, plasma jet array can obtain larger-area plasma with high treatment efficiency and practicability.

关 键 词：射流阵列 SIOX薄膜 表面电荷 环氧树脂 闪络电压 

分 类 号：TM21[一般工业技术—材料科学与工程]