Microstructure of Hydrogen-Implanted Polycrystalline α-SiC after Annealing  

作　　者：Hui-Ping Liu Jin-Yu Li Bing-Sheng Li 刘会平;李锦钰;李炳生(Institute of Modern Physics, Chinese Academy of Sciences)

机构地区：[1]Institute of Modern Physics, Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2018年第9期50-52,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11475229

摘　　要：Microstructural evolution in H-implanted polycrystalline a-SiC upon thermal annealing at temperature 1100℃ is studied. After annealing, the samples are examined via cross-sectional transmission electron microscopy （XTEM） analysis. H2 gas bubbles are formed during H implantation and some H2 molecules are released from the bubble to form cavities during thermal annealing. The distribution and size of the observed cavities are related to the implantation fluence. The results are compared to H implanted single crystal SiC and He implanted polycrystalline α-SiC. The possible reasons are discussed.Microstructural evolution in H-implanted polycrystalline a-SiC upon thermal annealing at temperature 1100℃ is studied. After annealing, the samples are examined via cross-sectional transmission electron microscopy （XTEM） analysis. H2 gas bubbles are formed during H implantation and some H2 molecules are released from the bubble to form cavities during thermal annealing. The distribution and size of the observed cavities are related to the implantation fluence. The results are compared to H implanted single crystal SiC and He implanted polycrystalline α-SiC. The possible reasons are discussed.

关 键 词：Microstructure of Hydrogen-Implanted Polycrystalline SiC after Annealing 

分 类 号：O469[理学—凝聚态物理]