Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K  

作　　者：Yuan Liu Li Wang Shu-Ting Cai Ya-Yi Chen Rongsheng Chen Xiao-Ming Xiongl Kui-Wei Geng 刘远;王黎;蔡述庭;陈雅怡;陈荣盛;熊晓明;耿魁伟(School of Automation, Guangdong University of Technology;School of Electronic and Information Engineering, South China University of Technology;Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences)

机构地区：[1]School of Automation,Guangdong University of Technology,Guangzhou 510006 [2]School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640 [3]Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences,Beijing 100029

出　　处：《Chinese Physics Letters》2018年第9期95-98,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61574048;the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172;the International Science and Technology Cooperation Program of Guangzhou under Grant No 201807010006;the Opening Fund of Key Laboratory of Silicon Device Technology under Grant No KLSDTJJ2018-6

摘　　要：The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters （threshold voltage, field effect mobility, sub-threshold swing, and leafage current） with decreasing temperature are then extracted and analyzed. Moreover, the dom- inated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters （threshold voltage, field effect mobility, sub-threshold swing, and leafage current） with decreasing temperature are then extracted and analyzed. Moreover, the dom- inated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.

关 键 词：In exp Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K 

分 类 号：TN321.5[电子电信—物理电子学]