一种二阶曲率补偿的带隙基准源设计  

A Second-order Compensation Bandgap Circuit Design

作　　者：石立志[1] 廖春连[1] SHI Li-zhi;LIAO Chun-lian(The 54th Research Institute of CETC,Shijiazhuang 050081,China)

机构地区：[1]中国电子科技集团公司第五十四研究所,河北石家庄050081

出　　处：《中国集成电路》2018年第9期63-66,共4页China lntegrated Circuit

摘　　要：本文针对二阶曲率补偿的带隙基准源进行了分析研究。该基准电路是基于典型的一阶曲率补偿方式,增加一个工作在深三极管区的N型MOS器件。在高温区,等效器件电阻将分流VBE的电流,从而调整VBE的二阶项。本文基于SMIC 0.18um 1.8V CMOS工艺的器件模型,在Spectre工具下进行了仿真,在-55℃^+120℃温度范围内,一阶曲率补偿带隙电压基准的温度系数为10ppm/℃,经过二阶曲率补偿的带隙电压基准的温度系数减小到约为5.2ppm/℃,带隙电压基准的温度特性得到了很大改善。整个补偿电路使用器件少、占用面积小、实用性强。This paper analyzes the bandgap reference source for second-order curvature compensation. The reference circuit is based on a typical first-order curvature compensation method that adds an N-type MOS device operating in the deep triode region. In the high temperature region, the equivalent device resistance will shunt the current of VBEto adjust the second-order term of VBE. This article is based on the SMIC 0.18 um 1.8 V CMOS device model, under the Spectre tool simulation. In the temperature range of-55℃ to ＋120℃, the temperature coefficient of the first-order curvature compensation bandgap voltage reference is 10 ppm/℃. The temperature coefficient of the band gap voltage reference after second-order curvature compensation is reduced to about 5.2 ppm/℃. The temperature characteristics of the band gap voltage reference have been greatly improved. The entire compensation circuit uses fewer devices, has a small footprint, and is highly practical.

关 键 词：二阶补偿 带隙基准 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]