Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric  

作　　者：Huifang Xu 

机构地区：[1]Institute of Electrical and Electronic Engineering,Anhui Science and Technology University

出　　处：《Journal of Semiconductors》2018年第10期39-45,共7页半导体学报（英文版）

基　　金：Project supported by the University Natural Science Research Key Project of Anhui Province(No.KJ2017A502);the Talents Project of Anhui Science and Technology University(No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities(No.gxyq2018048)

摘　　要：Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel potential profile by solving the Poisson equation with the Landau-Khalatnikov（LK） equation. Moreover, the effects of the channel mobile charges on the potential are also taken into account. We also analyze the dependences of the channel potential and the on-state current on the device parameters by changing the thickness of ferroelectric layer,ferroelectric material and also verify the simulation results accord with commercial TCAD. The results show that the device can obtain better characteristics when the thickness of the ferroelectric layer is larger as it can reduce the shortest tunneling length.Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel potential profile by solving the Poisson equation with the Landau-Khalatnikov（LK） equation. Moreover, the effects of the channel mobile charges on the potential are also taken into account. We also analyze the dependences of the channel potential and the on-state current on the device parameters by changing the thickness of ferroelectric layer,ferroelectric material and also verify the simulation results accord with commercial TCAD. The results show that the device can obtain better characteristics when the thickness of the ferroelectric layer is larger as it can reduce the shortest tunneling length.

关 键 词：ferroelectric gate dielectric double-gate tunnel field-effect transistor analytical model 

分 类 号：TN386[电子电信—物理电子学]