Ultralow specific ON-resistance high-k LDMOS with vertical field plate  

作　　者：Lijuan Wu Limin Hu Lin Zhu Hang Yang Bing Lei Haiqing Xie 

机构地区：[1]Changsha University of Science and Technology,Changsha 410004,China

出　　处：《Journal of Semiconductors》2018年第10期53-57,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundtion of China(No.61404011);the Research and Innovation Project of Graduate Students of Changsha University of Science&Technology(No.CX2017SS25);the Scientific Research Fund of Hunan Provincial Education Department(No.15C0034);the Introduction of Talents Project of Changsha University of Science Technology(No.1198023)

摘　　要：An ultralow specific on-resistance high-k LDMOS with vertical field plate（VFP HK LDMOS） is proposed. The high-k dielectric trench and highly doped interface N＋ layer are made in bulk silicon to reduce the surface field of the drift region in the VFP HK LDMOS. The gate vertical field plate（VFP） pinning in the high-k dielectric trench can modulate the bulk electric field. The high-k dielectric not only provides polarized charges to assist depletion of the drift region, so that the drift region and high-k trench maintain charge balance adaptively,but also can fully assist in depleting the drift region to increase the drift doping concentration and reshape the electric field to avoid premature breakdown. Compared with the conventional structure, the VFP HK LDMOS has the breakdown voltage of 629.1 V at the drift length of 40 μm and the specific on-resistance of 38.4 mΩ·cm^2 at the gate potential of 15 V. Then the power figure of merit is 10.31 MW/cm^2.An ultralow specific on-resistance high-k LDMOS with vertical field plate（VFP HK LDMOS） is proposed. The high-k dielectric trench and highly doped interface N＋ layer are made in bulk silicon to reduce the surface field of the drift region in the VFP HK LDMOS. The gate vertical field plate（VFP） pinning in the high-k dielectric trench can modulate the bulk electric field. The high-k dielectric not only provides polarized charges to assist depletion of the drift region, so that the drift region and high-k trench maintain charge balance adaptively,but also can fully assist in depleting the drift region to increase the drift doping concentration and reshape the electric field to avoid premature breakdown. Compared with the conventional structure, the VFP HK LDMOS has the breakdown voltage of 629.1 V at the drift length of 40 μm and the specific on-resistance of 38.4 mΩ·cm^2 at the gate potential of 15 V. Then the power figure of merit is 10.31 MW/cm^2.

关 键 词：high-k dielectric vertical field plate high voltage specific on-resistance polarized charges 

分 类 号：TN432[电子电信—微电子学与固体电子学]