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作 者:Hao Luo Cheng'ao Yang Shengwen Xie Xiaoli Chai Shushan Huang Yu Zhang Yingqiang Xu Zhichuan Niu
机构地区:[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences [3]Synergetic Innovation Center of Quantum Information and Quantum Physics,University of Science and Technology of China
出 处:《Journal of Semiconductors》2018年第10期58-63,共6页半导体学报(英文版)
基 金:Project supported by the National Basic Research Program of China(Nos.2016YFB0402403,2014CB643903);the National Natural Science Foundation of China(Nos.61790583,61435012)
摘 要:The GaSb-based distributed Bragg reflection(DBR) diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma(ICP) etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio(SMSR) was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.The GaSb-based distributed Bragg reflection(DBR) diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma(ICP) etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio(SMSR) was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.
关 键 词:GaSb-based distributed Bragg reflection inductively coupled plasma single longitudinal mode highorder gratings
分 类 号:TN248[电子电信—物理电子学]
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