含两个荷控忆阻器最简混沌电路的设计与研究  

Study on How to Design Simplest Chaotic Circuit with two Charge-controlled Memristors

作　　者：吴淑花[1] 容旭巍[1] 刘振永[1] Wu Shuhua, Rong Xuwei, Liu Zhenyong(School of Physics and Electrical Information Engineering, Shijiazhuang University, Shijiazhuang 050035, China)

机构地区：[1]石家庄学院物理与电气信息工程学院,河北石家庄050035

出　　处：《系统仿真学报》2018年第10期3985-3994,4001,共11页Journal of System Simulation

基　　金：河北省高校科技研究(ZC2016062)

摘　　要：利用两个HP实验室荷控忆阻器模型设计了一个最简的五阶混沌电路,利用常规动力学分析方法研究了电路系统的基本动力学特性,发现其初始不稳定的暂态期,并用最大李雅普诺夫指数记录了初始振荡过程;计算了电路系统中两个忆阻器的伏安特性和功率输出,判断忆阻器为无源器件;通过分岔图和最大李雅普诺夫指数谱研究了电感、电容和电导这三个元件参数对电路系统的影响;计算仿真了双参数空间中电路系统的特性分布和系统的状态特点,得到了这个混沌电路系统在两个元件参数共同作用下的复杂的动力学行为走向。A simplest five-order chaotic circuit is designed with two HP laboratory charge-controlled memristor models and its basic dynamic characteristics are studied using the conventional dynamic analysis method, through which its initial unstable oscillation is discovered and the initial oscillation process is recorded with the maximum Lyapunov exponent,＂ the volt-ampere characteristic and the power output of the two memristors in the circuit are computed, indicating that the memristors are passive components; and the impacts of the inductance, capacitance and conductance to the circuit system are studied using the bifurcation diagram and the maximum Lyapunov exponent spectrum. In addition, the distribution of the maximum Lyapunov exponent and the state characteristics of the system in the dual-parameter space are computed and simulated so that the complicated dynamic behavior strike of the chaotic circuit under the function of two component parameters is achieved.

关 键 词：混沌电路 HP忆阻器 暂态过程 双参数特性 

分 类 号：O415.5[理学—理论物理] TN60[理学—物理]